Oxygen assisted focused electron beam induced deposition of silicon dioxide
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The growth dynamics of oxygen assisted focused electron beam induced deposition of Si-containing materials (from SiOxCy to SiO2) were investigated as a function of relevant process parameters. The results obtained from organosilanes of different families ( ...
Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The aut ...
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We have calculated the atomistic mechanism for the HfO2 atomic layer deposition (ALD) using Hf(NEtMe)(4) and H2O precursors using density functional theory. On hydroxylated Si surface, our results show overall Hf(NEtMe)(4) half-reaction is exothermic by 1. ...
We report on the fabrication and electrical characterization of functionalized solid-state nanopores in low stress silicon nitride membranes. First, a pore of approximately 50 nm diameter was drilled using a focused ion beam technique, followed by the loca ...
Oxygen vacancy migration is studied in monoclinic HfO2 and across its interface with SiO2 through density functional calculations. In HfO2, long-range diffusion shows activation barriers of 2.4 and 0.7 eV for the neutral and doubly positively charged vacan ...
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