Frequency-Effects in Silane Plasmas for Plasma Enhanced Chemical Vapor-Deposition
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Hydrogenated amorphous silicon has been prepared at a plasma excitation frequency in the very-high-frequency band at 70 MHz with the glow discharge technique at substrate temperatures between 280 and 50-degrees-C. The structural properties have been studie ...
Intrinsic stress measurements were carried out on hydrogenated amorphous silicon (a-Si:H) films deposited with different excitation frequencies (13.56-70 MHz), by plasma-enhanced chemical vapor deposition. It was observed that films deposited at 70 MHz hav ...
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Particulate contamination produced during plasma-assisted deposition of amorphous silicon devices can be responsible for reduced quality and yield. The threshold for powder formation imposes an upper limit on the radio frequency (rf) power and hence the de ...
