The physics of plasma-enhanced chemical vapour deposition for large-area coating: industrial application to flat panel displays and solar cells
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The influence of Ta, Ti and TiO2 adhesion layers with Pt bottom electrodes and the deposition temperature of the metallization on the nucleation and growth of sol-gel derived Pb(Zr0.53Ti0.47)O-3 thin films is reported. Several different PZT annealing profi ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...
There is a need for chemically resistant coatings that protect the exposed surface of microfluidics components. Pinhole free films with low stress and a good uniformity on flat and inclined surfaces are required. In this study, amorphous silicon carbide (S ...
It is now generally recognized that the excitation frequency is an important parameter in radio-frequency (rf) plasma-assisted deposition. Very-high-frequency (VHF) silane plasmas (50-100 MHz) have been shown to produce high quality amorphous silicon films ...
The anodic oxidn. of H2SO4 to H2S2O8 was investigated on B-doped synthetic diamond electrodes obtained by hot filament chem. vapor deposition. High current efficiency for H2S2O8 formation can be achieved in concd. H2SO4 (7.5 mol dm-3) and using high curren ...
Hydrogenated polymorphous silicon (pm-Si:H) is a new material obtained by plasma-enhanced chemical vapour deposition by running the plasma close to powder formation. Preliminary studies have revealed the presence of silicon nanocrystallites embedded in an ...
Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy consisting of 50 periods of either 2 monolayers (ML), 4 ML, 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs were under investigation. Even at room temperature d ...
GaN and AlxGa1-xN alloys were grown by gas sourer molecular beam epitaxy using NH3. High quality GaN layers with smooth surfaces being obtained, reflection high-energy electron diffraction (RHEED) can be used to monitor the growth. The oscillations of the ...
The texture of sputter deposited PbTiO3 films could be turned from (100)- to (111)-orientation by adding a few nm thick TiO2 layer onto the textured Pt(111) substrate film. AES, XPS, and XPD measurements showed that such TiO2 films were epitaxially ordered ...