Publication

Charging dynamics of localized 2D layers of Si nanocrystals embedded into SiO2 by stencil masked ultra low energy ion implantation process

Publications associées (60)

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Josef Andreas Schuler, Michele Tamagnone, Wolfgang Amadeus Vitale, Antonio Paone

This work reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal-insulator-transition in vanadium dioxide devices. The reported devices are CMOS compatible 2-terminal switches. We ...

Institute of Electrical and Electronics Engineers2015

Integration of 2D and 3D Thin Film Glassy Carbon Electrode Arrays for Electrochemical Dopamine Sensing in Flexible Neuroelectronic Implants

Philippe Renaud, André Mercanzini, Jules John Vandersarl

Here we present the development and characterization of a flexible implantable neural probe with glassy carbon electrode arrays. The use of carbon electrodes allows for these devices to be used as chemical sensors, in addition to their typical use as elect ...

Wiley-Blackwell2015

Loading and release of internally self-assembled emulsions embedded in a magnetic hydrogel

László Forró, Andrzej Sienkiewicz, Katarzyna Pierzchala

We have investigated drug loading and release from thermosensitive gel emulsions with external triggering by an alternating magnetic field (AMF) for on-demand drug delivery. Superparamagnetic iron oxide nanoparticles dispersed in gel emulsions were used to ...

Amer Inst Physics2014

Global Fan Speed Control Considering Non-Ideal Temperature Measurements in Enterprise Servers

David Atienza Alonso, Mohamed Mostafa Sabry Aly, Jungsoo Kim

Time lag and quantization in temperature sensors in enterprise servers lead to stability concerns on existing variable fan speed control schemes. Stability challenges become further aggravated when multiple local controllers are running together with the f ...

IEEE/ACM Press2014

A (Nearly) Free Lunch

Xavier Jimenez

NAND flash is a key storage technology in modern computing systems. Without it, many devices would probably not exist today or would at least not benefit from as many features. The very large success of this technology motivated massive efforts to scale it ...

EPFL2014

Growth and Magnetism of Nanostructures Investigated by STM, MOKE, and XMCD

Alberto Cavallin

This thesis presents our studies on nanostructures growth and magnetism, mainly based on scanning tunneling microscopy (STM), magneto-optical Kerr effect (MOKE), and x-ray magnetic circular dichroism (XMCD) measurements. In most of these experiments, nanos ...

EPFL2013

Helium embrittlement of a lamellar titanium aluminide

Philippe Spätig, Per Magnusson

Embrittlement by helium was investigated in a lamellar TiAl alloy under two conditions: Specimens were implanted to various amounts of helium up to 762 appm at temperatures from 630 °C to 1000 °C and some of them subsequently creep-tested at the same tempe ...

Elsevier2013

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Andras Kis, Daria Krasnozhon, Simone Bertolazzi

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

Numerical and Compact Modeling of Embedded Flash Memory Devices Targeted for IC Design

Davide Garetto

In a semiconductor market dominated by portable consumer applications, embedded flash memory technology has experienced a rapid diffusion. It is now considered the preferred solid-state memory solution for its non-volatile characteristics, high read and wr ...

EPFL2012

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Giovanni Antonio Salvatore

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

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