High coupling materials for thin film bulk acoustic wave resonators
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In situ reactively sputter deposited, 300-nm-thick Pb(Zrx,Ti1-x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2). X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements ...
Highly textured PZT(111), PZT(001/100) and random PZT films have been grown on Pt and RuO2 bottom electrodes by means of an in-situ, multimagnetron reactive sputtering process with three metal targets (Pb, Zr, Ti). The orientation was varied with the botto ...
Mechanisms of polarization switching and fatigue in (Pb, La)(Zr, Ti)O-3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found th ...
Aluminum nitride thin films have been grown by reactive magnetron sputter technique using a pulsed power supply. The highly (002)-textured columnar films deposited on platinized silicon substrates exhibited quasi-single-crystal piezoelectric properties. Th ...
The ac field dependence of dielectric and piezoelectric response of sol-gel derived Pb(Zr,Ti)O(3)thin films is presented. The nonlinear response of dielectric polarisation and piezoelectrically induced strain at sub-switching fields was studied in terms of ...
Having a composition closed to the morphotropic phase boundary, PZT films of 14 mu m thickness with a porosity less than 7% were prepared by the double print double firing method. At room temperature the dielectric constant, remanent polarization and coerc ...
The integration of piezoelectric Pb(Zr,Ti)O-3 thin films on silicon substrates for ultrasonic motor applications is reviewed. With suitable buffer and bottom electrode layers the problems due to high processing temperatures in oxygen ambient can be handled ...
A Landau-Ginsburg-Devonshire-type thermodynamic theory is used to describe equilibrium single-domain states and phase transitions in epitaxial ferroelectric thin films. For BaTiO3 and PbTiO3 films grown on cubic substrates, the paraelectric to ferroelectri ...
The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...
The effects of donor (Nb, Ta) and acceptor (Na, Mg, Fe) dopants on the crystallization mechanism of PZT thin films were investigated. The parameters which control microstructure development were found to be different for donors and accepters. Lead stoichio ...
