Electronic structure at realistic Si(100)-SiO2 interfaces
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points ...
Leakage conduction of Pt-Pb(ZrXTi:(1-X))O-3-Pt capacitors is studied by means of different measuring techniques and analyzed in terms of semiconductor properties of the system. Based on the experimental data, it is concluded that two different regimes of c ...
The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral mic ...
We studied the newly synthesized quasi-one-dimensional compound Nb4Te17I4. Resistivity measurements confirmed its pseudo-one-dimensional character and photoemission spectroscopy clarified the nature of its valence band states. This polytelluride is a narro ...
This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interfac ...
We present a comparative study of the structural properties of three different models for the Si(001)-SiO2 interface. The models are obtained by attaching different crystalline forms of SiO2, such as tridymite and beta-cristobalite, to Si(001). In the case ...
Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacito ...
The concepts of lifetime and relaxation semiconductors introduced by van Roosbroeck and Casey are reconsidered for amorphous semiconductors and the effect of localized states on the lifetime/relaxation criterion specified: The quantity to be considered is ...
We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of ...
The bonding of Pd atoms evaporated on a thin layer of silicon intermediate oxidation states has been studied by core level and valence band photoemission spectroscopy. The particular substrate was obtained by controlled exposure of a cleaved Si surface to ...
