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Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Publications associées (42)

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The increasing demand for extracting value out of ever-growing data poses an ongoing challenge to system designers, a task only made trickier by the end of Dennard scaling. As the performance density of traditional CPU-centric architectures stagnates, adva ...

2017

A storage device stores data in groups of memory cells using vectors corresponding to voltage code codewords, each codeword having k entries. Entries have values selected from a set of at least three entry values and 2.sup.n distinct inputs can be encoded ...

2016

Power, Area, and Performance Optimization of Standard Cell Memory Arrays Through Controlled Placement

Andreas Peter Burg, Adam Shmuel Teman, Luca Benini, Pascal Andreas Meinerzhagen

Embedded memory remains a major bottleneck in current integrated circuit design in terms of silicon area, power dissipation, and performance; however, static random access memories (SRAMs) are almost exclusively supplied by a small number of vendors throug ...

Association for Computing Machinery2016

A memory circuit, such as an embedded DRAM array, stores information as groups of bits or data using information coding in storage and retrieval data, instead of each bit being stored separately. Write data words can be mapped to storage format words that ...

2016

Designing Low Power and Durable Digital Blocks Using Shadow Nanoelectromechanical Relays

Paolo Ienne, Hossein Asadi, Sadegh Yazdanshenas

Nanoelectromechanical (NEM) relays are a promising emerging technology that has gained widespread research attention due to its zero leakage current, sharp ON-OFF transitions, and complementary metal-oxide-semiconductor compatibility. As a result, NEM rela ...

Institute of Electrical and Electronics Engineers2016

Single-Supply 3T Gain-Cell for Low-Voltage Low-Power Applications

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Pascal Andreas Meinerzhagen

Logic compatible gain cell (GC) embedded DRAM (eDRAM) arrays are considered an alternative to SRAM due to their small size, non-ratioed operation, low static leakage, and 2-port functionality. However, traditional GC-eDRAM implementations require boosted c ...

Ieee-Inst Electrical Electronics Engineers Inc2016

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Gain cell embedded DRAM (GC-eDRAM) is a high-density alternative to SRAM for ultra-low-power systems. However, due to its dynamic nature, GC-eDRAM requires power-hungry refresh cycles to ensure data retention. Traditional design approaches dictate configur ...

Ieee2016

ShiDianNao: shifting vision processing closer to the sensor

Paolo Ienne, Robert Fasthuber, Zidong Du

In recent years, neural network accelerators have been shown to achieve both high energy efficiency and high performance for a broad application scope within the important category of recognition and mining applications. Still, both the energy efficiency a ...

ACM2015

Scaling the Memory Power Wall with DRAM-Aware Data Management

Anastasia Ailamaki, Raja Appuswamy, Matthaios Alexandros Olma

Improving the energy efficiency of database systems has emerged as an important topic of research over the past few years. While significant attention has been paid to optimizing the power consumption of tradition disk-based databases, little attention has ...

ACM2015

Design of High-Temperature SRAM for Reliable Operation Beyond 250 C

Yusuf Leblebici, Radisav Cojbasic

In this paper, we analyze the 6T SRAM cell failures caused by temperature and supply voltage variations, and we explore the design of robust SRAM cells for high temperature operation. This integral SRAM reliability study is performed using 180nm SOI CMOS p ...

2015