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From oxide surface to organic transistor properties: the nature and the role of oxide gate surface defects

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From oxide surface to organic transistor properties: the nature and the role of oxide gate surface defects

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Chattez avec Graph Search

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

The Effect of Interface Modification on the Properties of Organic Thin-Film Transistors

Organic thin-film transistors: the passivation of the dielectric-pentacene interface by dipolar self-assembled monolayers

Memristive Devices Fabricated with Silicon Nanowire Schottky Barrier Transistors

Hopping and trapping mechanisms in organic field-effect transistors

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Organic thin film transistors on flexible polyimide substrates fabricated by full-wafer stencil lithography

Semiconductor device and method of manufacturing a semiconductor device

Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

Hopping and trapping mechanisms in organic field-effect transistors

Memristive Devices Fabricated with Silicon Nanowire Schottky Barrier Transistors

Semiconductor device and method of manufacturing a semiconductor device

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

The Effect of Interface Modification on the Properties of Organic Thin-Film Transistors

Organic thin-film transistors: the passivation of the dielectric-pentacene interface by dipolar self-assembled monolayers

Organic thin film transistors on flexible polyimide substrates fabricated by full-wafer stencil lithography

Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate