Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells
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A novel mechanism for ramified island growth in the initial stages of metal heteroepitaxy is reported. Scanning tunneling microscopy measurements reveal that copper islands on Ni(100), as they grow in size, undergo a shape transition. Below a critical size ...
The influence of indium surface segregation, As-P exchange at the interfaces and residual incorporation of As and P on the photoluminescence properties of GaAs/GaInP quantum wells, is investigated both theoretically and experimentally. It is shown that the ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon ...
The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
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We report the optical properties of high quality V-groove GaAs/Al0.3Ga0.7.As quantum wires (QWRs) with different thicknesses of the GaAs layer. The systematic investigation of photoluminescence (PL) and photoluminescence excitation (PLE) spectra as a funct ...
We investigate the mechanisms leading to the optical non-linearities observed on a strongly excited semiconductor microcavity containing quantum wells. This study of a coupled exciton-cavity system is possible owing to the availability of a sample of excep ...
Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers wer ...
InGaN/GaN heterostructure samples were grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The growth of InGaN/GaN self-assembled quantum dots was monitored in situ by reflection high energy electron diffraction intensity oscillations. A ...
Femtosecond luminescence measurements combined with pump-probe experiments using selective excitation of either free carriers or excitons have been performed. The time-resolved luminescence spectra show a striking disparity compared with recently published ...