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Focused electron- and ion-beam induced processing are well established techniques for local deposition and etching that rely on decomposition of precursor molecules by irradiation. These high-resolution nanostructuring techniques have various applications ...
Local tuning of the optical response of GaAs-based two dimensional photonic crystals (PhCs) is reported. A selective polymer infiltration technique was developed. Scanning electron microscopy and optical measurements were used to characterize the filled Ph ...
Submonolayer epitaxial growth is obtained by the deposition of less than a complete layer of atoms on a single crystal surface. It is of fundamental interest for industrial applications (e.g. in the semiconductor industry) as well as from the point of view ...
Nanometer-thick platinum silicide films were obtained by solid-state thermal reaction films in the presence of an interfacial native silicon oxide layer. They were studied using High-Resolution Transmission Electron Microscopy (HRTEM) and selected-area ele ...
We have synthesized Si Nps rich submicron area within a thin SiO2 layer using a new method called “stencil-masked ion implantation”. It consists in implanting silicon ions at ultra-low energy through windows (from 50nm to 2μm) opened in a stencil mask cont ...
Tunable resonant cavity enhanced detectors (RCED) have been realised for the mid-infrared (IR). The bottom mirror as well as the photodiode inside the cavity are based on narrow gap IV-VI materials and grown by molecular beam epitaxy (MBE) on Silicon subst ...
Here we present a comparative analysis of two types of equally monodisperse gold nanoparticles (similar to 8 nm in diameter), one coated only with dodecanethiol ligands and the other coated with a mixture of dodecanethiol and 4-methylbenzenethiol ligands. ...
Scanning Electron Microscopy Image Analysis (SEM-IA) was used to quantify the degree of alkali silica reaction in affected microbars, mortar and concrete prisms. It was found that the degree of reaction gave a unique correlation with the macroscopic expans ...
Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the g ...
The perovskite SrHfO3 can be a potential candidate among the high-permittivity materials for gate oxide replacement in future metal-oxide semiconductor field-effect transistor technology. Thin films of SrHfO3 were grown by molecular beam epitaxy and compar ...