Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells
Publications associées (101)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The coherent optical response of high quality microcavities containing quantum wells is investigated. The dynamics of the ac Stark effect is investigated by degenerate pump-probe experiments, by exciting the quantum well excitons at various intensities and ...
A novel method of controlling light absorption by exciton-polaritons is presented. The coherent light-induced coupling of excitons in multiple quantum well Bragg structures is exploited to sup press dramatically the absorption. Our results show that excito ...
Time-resolved up-conversion measurements of secondary emission from multiple quantum wells under resonant femtosecond excitation are reported for GaAs multiple quantum wells with qualitatively different interface disorder. The transient resonant Rayleigh s ...
InGaN/GaN heterostructure samples were grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The growth of InGaN/GaN self-assembled quantum dots was monitored in situ by reflection high energy electron diffraction intensity oscillations. A ...
By comparing photoluminescence and photo reflectance spectra taken on a series of InGaN-GaN quantum wells grown under identical conditions except the growth time of the InGaN layers, we could monitor the Quantum Confined Stark Effect (QCSE) without changin ...
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8 < T < 280 K). We investigate the influence of growing or not an AlGaN barrier on top of the active layer. We address the differences betw ...
It is shown that both GaN and Ga0.8In0.2N quantum dots (QDs) can be grown by molecular beam epitaxy on silicon or sapphire substrates making use of the strain-induced two-dimensional (2D)-three dimensional (3D) growth mode occurring for mismatched material ...
We report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associate ...
MBE-grown samples containing several GaN-AlxGa1-xN quantum wells of varying widths are studied by picosecond time-resolved photoluminescence. Extremely strong built-in electric fields are present in such systems, due to piezoelectric and pyroelectric effec ...
A reordered valence band in GaN/AlxGa1-xN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g factor (g*similar to3) in magnetoluminescence spectra in fields up to 55 T. This has been caused by a rever ...