Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers
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Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
We report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x similar to 0.17 are lattice-matched to GaN, thus avoiding strain ...
The surface morphology of GaN(0001) grown on Si(111) by molecular beam epitaxy using ammonia has been studied by near-field microscopy techniques. Two distinct morphologies are observed, depending on the growth kinetics. When using Ga-rich growth condition ...
The effect of high-temperature annealing on stress in AlxGa1-xN in different ambients and at different temperatures was studied using ultraviolet micro-Raman spectroscopy. Low (x=0.08) and high (x=0.31 and x=0.34) composition AlGaN, grown by metalorganic c ...
The local In distribution in InGaN quantum wells was measured in samples which were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) varying systematically the metal-flux ratio and the growth rate. The composition analyses ...
We report on the growth by molecular-beam epitaxy on 2 in. sapphire substrates of crack-free AlxGa1-xN/GaN distributed Bragg reflectors (DBRs) with high-Al composition (x=0.5). This is achieved by introducing a thick AlN interlayer and strain mediating Aly ...
In-situ reflectivity measurements of the growth surface during deposition in a Hydride Vapor Phase Epitaxy system are presented. The GaN growth rate increases linearly with the HCl flow and increases monotonically with the ammonia flow. Following the repla ...
We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...
We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (< 1 degrees)-misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorienta ...
