Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers
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Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
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The effect of high-temperature annealing on stress in AlxGa1-xN in different ambients and at different temperatures was studied using ultraviolet micro-Raman spectroscopy. Low (x=0.08) and high (x=0.31 and x=0.34) composition AlGaN, grown by metalorganic c ...
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