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Characterization of deep levels in n-GaN by combined capacitance transient techniques

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Characterization of deep levels in n-GaN by combined capacitance transient techniques

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Chattez avec Graph Search

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a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

An adaptive model of overheating risk

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Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

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