Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells
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We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
We report on the observation of negatively and positively charged excitons in the photoluminescence spectra of V-groove quantum wires. The charged exciton binding energy increases with the strength of the quantum confinement. We demonstrate that the charge ...
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We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8 < T < 280 K). We investigate the influence of growing or not an AlGaN barrier on top of the active layer. We address the differences betw ...
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The ban ...
By comparing photoluminescence and photo reflectance spectra taken on a series of InGaN-GaN quantum wells grown under identical conditions except the growth time of the InGaN layers, we could monitor the Quantum Confined Stark Effect (QCSE) without changin ...
MBE-grown samples containing several GaN-AlxGa1-xN quantum wells of varying widths are studied by picosecond time-resolved photoluminescence. Extremely strong built-in electric fields are present in such systems, due to piezoelectric and pyroelectric effec ...
Recombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum ...
A dramatic suppression of the absorption of light by exciton polaritons is observed after resonant excitation of the polaritonic modes in a multiple quantum well Bragg structure. Time-resolved reflectivity measurements confirm that this is due to the forma ...
We report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associate ...
We investigate the mechanisms leading to the optical non-linearities observed on a strongly excited semiconductor microcavity containing quantum wells. This study of a coupled exciton-cavity system is possible owing to the availability of a sample of excep ...