High spatial resolution picosecond cathodoluminescence of InGaN quantum wells
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A dramatic suppression of the absorption of light by exciton polaritons is observed after resonant excitation of the polaritonic modes in a multiple quantum well Bragg structure. Time-resolved reflectivity measurements confirm that this is due to the forma ...
We report on Raman scattering experiments performed on GaN-AlGaN quantum well structures, using various ultraviolet excitations. Under near resonant conditions we observe an important enhancement of the multi-LO phonon scattering in the wells or in the bar ...
We report evidence of a large blue shift (up to 70 meV) in the photoluminescence spectra of InAs/InP island like quantum wells following the reduction of the InP top barrier layer thickness from 6 nm to near zero. The photoluminescence intensity only start ...
We report on microscopic photoluminescence and photoluminescence excitation of thin Al0.3Ga0.7As/GaAs quantum wells grown on exactly oriented (001) GaAs substrates. The experiments are done at low temperature by selectively exciting a few mu m(2) of the sa ...
We demonstrated that polycrystalline cesium iodide (CsI) on large area Ni/Au coated printed board provides a quantum efficiency (QE) higher by a factor of 2 than the films deposited on the standard Cu/Au printed circuits. This is the most important result ...