GaN and InGaN quantum dots grown by MBE: from UV to red light emission
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In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...
We report on the dependence on temperature of the homogeneous and inhomogeneous broadening of the fundamental transition of single polar GaN/AlN quantum dots (QDs). Stranski-Krastanov QDs have been grown by molecular beam epitaxy using NH3 as a nitrogen so ...
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InAs columnar quantum dash (CQDash) structures on (100) InP have been realized by gas source molecular beam epitaxy for stacking numbers of up to 24. Laser devices show low threshold current densities between 0.73 and 3.5 kA/cm(2), dependent on the CQDash ...
Over the past few decades, III-V nitrides have attracted much attention due to the possibility to realize high efficiency optoelectronic devices covering all the UV and visible part of the light spectrum. However, the device fabrication has gone much faste ...
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