GaN and InGaN quantum dots grown by MBE: from UV to red light emission
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We report on the dependence on temperature of the homogeneous and inhomogeneous broadening of the fundamental transition of single polar GaN/AlN quantum dots (QDs). Stranski-Krastanov QDs have been grown by molecular beam epitaxy using NH3 as a nitrogen so ...
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Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to 20 nm thickness is studied by photoluminescence (PL) and PL excitation (PLE) spectroscopy. It is ...
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In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...
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Quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) are semiconductor heterostructures with nanoscopic dimensions. At this length scale, their properties are governed by quantum mechanics. The interest in these nanostructures is motivated by a ...
