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This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called subthreshold mode. In analog circuits, w.i. is reached at very low current, but it is als ...
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Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...
Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
A new idea as well as CMOS implementation of a pulse-shaping filter useful in nuclear medicine to realize a multi-element detection by means of a multi-channel readout front-end ASIC have been presented. The filter changes the shape of pulses delivered by ...
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
An important prerequisite for the design of digital integrated circuits is the ability to control the threshold voltage of the individual transistors during manufacturing. To address the problem of controlling the threshold voltage of low-voltage organic t ...
The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...
We present a new electronic device – the single-electron bipolar avalanche transistor (SEBAT) – which allows for the detection of single charges with a bandwidth typically above 1 GHz, exceeding by far the bandwidth of other room-temperature single-electro ...
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...
We report on real-time detection of single electrons inside a n-p-n bipolar junction transistor at room temperature. Single electrons injected through the base-emitter junction trigger with a high probability the avalanche breakdown of the strongly reverse ...
