Er-doped Al2O3 thin films deposited by high-vacuum chemical vapor deposition (HV-CVD)
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The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...
ECOLE POLYTECHNIQUE FEDERALE LAUSANNE (ECOL-Non-standard) BENVENUTI G (BENV-Individual) AMOROSI S (AMOR-Individual) HALARY-WAGNER E (HALA-Individual)2002
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