Scanning Tunneling Microscopy and Luminescence of Individual Nanostructures
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
We report on the growth and optical properties of dense arrays of single GaAs/AlGaAs quantum dot (QD) heterostructures with pitches as small as 300 nm. The samples were grown by organometallic chemical vapor deposition in dense inverted pyramids on {1 1 1} ...
Spatially resolved photoluminescence spectra of thin GaAs quantum wells are measured by near-field spectroscopy, and two-energy autocorrelation functions of the spectra are derived. We demonstrate distinctly different autocorrelation functions for a 3-nm-t ...
An array of exchange biased spin-valve giant-magnetoresistance nanopillars was fabricated and the current I dependence of the resistance R was investigated using an electrically conducting atomic-force microscope (AFM) probe contact at room temperature. We ...
We have observed marked oscillations in the time-resolved photoluminescence of a semiconductor microcavity under non-resonant excitation conditions. Hot excitons, created with an ultrashort light pulse, rapidly relax into polaritons in the cavity with a la ...
We analyze the low temperature photoluminescence properties of two multi-layer stacking of GaN/AlN quantum dots. We report drastic differences of linewidths between continuous wave and time-resolved photoluminescence experiments. After the pulsed excitatio ...
Al0.1Ga0.9N(5nm)/GaN(2nm) and In0.2Ga0.8N/GaN quantum wells (QWs) grown on GaN/sapphire have been studied by cathodoluminescence (CL) spectroscopy and imaged using an experimental setup especially developed for scanning near-field CL microscopy, which comb ...
Wurtzitic nitride quantum wells grown along the (0001) axis experience a large Stark effect induced by the differences of spontaneous and piezoelectric polarizations between the well and barrier materials. In AlxGa1-xN/GaN quantum wells, due to the adverse ...
‘Real-time’ nanoscale imaging and single molecule force spectroscopy of bio-chemical specimen based on atomic force microscopy (AFM) requires cantilevers with both low force constant and high-resonant frequency. The required spring constant should be betwe ...
We analyze the room temperature photoluminescence properties of several multilayer stackings of GaN/AlN quantum dots. We report drastic differences of emission energies and linewidths between continuous wave and time-resolved photoluminescence experiments. ...
In this paper, the RBS phenomenon is described and experimental results concerning Bragg reflectors and microcavities grown on silicon substrates by molecular beam epitaxy are presented. This spectroscopy is not sensitive to (i) the lateral fluctuation of ...
