Investigation of Two-Dimensional Electron Gases with Angular Resolved Photoemission Spectroscopy
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Type-II GaAs/AlAs multiple-quantum well samples groan by low-pressure metal-organic vapour-phase epitaxy have been investigated. The layered structures consist of 50 periods of either 2 monolayers (ML), 4 ML. 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs ...
The electronic structure of cis-bis(4,4'-dicarboxy-2,2'-bipyridine)bis(isothiocyanato)ruthenium(II) and of its ligand 2,2'-bipyridine-4,4'-dicarboxylic acid was studied with electron spectroscopy. Valence level spectra were studied with respect to photoele ...
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Identical GaAs/Al0.2Ga0.8As multiple-quantum-well (MQW) structures uniformly doped with Si at various concentrations ranging from 1x10(17) to 1X10(19) cm(-3) are grown by molecular-beam epitaxy to study the effects of the background Si-doping level on the ...
GaN grown by three different methods (MOVPE, GSMBE and HVPE) have been studied using temperature (T) dependent reflectivity and photoluminescence (PL). Both non intentionally doped (MOVPE, GSMBE and HVPE), n- and p-doped samples (MOVPE and GSMBE) have been ...
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The present tunneling microscopy study reveals that the growth of silver on Pt(111) at substrate temperatures above 620 K results in the formation of a two-dimensional alloy consisting of Ag clusters dissolved in the Pt layer [THETA(Ag)
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