Publication

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

Publications associées (32)

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

Perovskite Flash Memory with a Single-Layer Nanofloating Gate

Mohammad Khaja Nazeeruddin, Peng Gao, Hobeom Kim

Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...

2020

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâs excellent performance properties such as high sw ...

EPFL2019

ReRAM From Material Study to CMOS Co-integration

Elmira Shahrabi

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

EPFL2019

Resistive Switching Memory Architecture Based on Polarity Controllable Selectors

Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon

With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...

2018

An FPGA-Based Test System for RRAM Technology Characterization

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Maxime Victor Thammasack, Armando Biscontini

Resistive random access memory (RRAM) technologies have recently gained large attention from the academic and industrial research communities. Significant efforts have been made to enhance the performance of the memory stacks from both communities through ...

2018

Perspective on training fully connected networks with resistive memories: Device requirements for multiple conductances of varying significance

Giorgio Cristiano, Massimo Giordano

Novel Deep Neural Network (DNN) accelerators based on crossbar arrays of non-volatile memories (NVMs)-such as Phase-Change Memory or Resistive Memory-can implement multiply-accumulate operations in a highly parallelized fashion. In such systems, computatio ...

2018

Resistive random access memory based multiplexers and field programmable gate arrays

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Gain Kim, Edouard Giacomin

Resistive random access memory (RRAM) based multiplexers and field programmable gate arrays (FPGAs) are provided. The RRAM-based multiplexers and FPGAs include a 4T1R programming structure to program the RRAMs. The programming structure includes two progra ...

2018

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Mihai Adrian Ionescu, Igor Stolichnov

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

IEEE2018

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