Publication

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Publications associées (43)

À propos
Confidentialité
Mentions légales

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Connectez-vous pour utiliser Chat avec Graph Search

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Graph Chatbot

Chattez avec Graph Search

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Gallium arsenide p-i-n radial structures for photovoltaic applications

Gallium arsenide p-i-n radial structures for photovoltaic applications

Characterization of a-plane grown GaN on sapphire substrates by electron microscopy

Non-polar GaN epilayers and heterostructures for photonic applications

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Photoluminescence from a single InGaAs epitaxial quantum rod

Controlling the aspect ratio of quantum dots: From columnar dots to quantum dots

High doping level in Mg-doped GaN layers grown at low temperature

Characterization of a-plane grown GaN on sapphire substrates by electron microscopy

Non-polar GaN epilayers and heterostructures for photonic applications

Photoluminescence from a single InGaAs epitaxial quantum rod

Gallium arsenide p-i-n radial structures for photovoltaic applications

Gallium arsenide p-i-n radial structures for photovoltaic applications

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Controlling the aspect ratio of quantum dots: From columnar dots to quantum dots

High doping level in Mg-doped GaN layers grown at low temperature