Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model
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Transconductance efficiency (g(m)/I-D) is an essential design synthesis tool for low-power analog and RF applications. In this paper, the invariance of g(m)/I-D versus normalized drain current curve is analyzed in an asymmetric double-gate (DG) fully deple ...
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The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
This thesis presents a collection of experimental results about the large-area growth of single-layer graphene and MoS2 films. In addition, we present the results of electrical characterisation of two-dimensional (2D) materials in direct current (DC) and r ...
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...
