Low voltage electrostatic 90° turning flap for reflective MEMS display

A low voltage electrostatically actuated 90° turning flap is modeled and fabricated. The application is a new kind reflective, low-power, MEMS-based display with high contrast and reflectance. The system consists of a poly-silicon flap fabricated onto a silicon substrate with a transparent counter electrode on glass and a device layer of a silicon-on-insulator (SOI) wafer as spacer in between them. Actuation voltages down to 20V are achieved.