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Polymer-electrolyte gated graphene transistors for analog and digital phase detection

Publications associées (39)

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GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

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A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Nanoplasma-enabled picosecond switches for ultrafast electronics

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Minghua Zhu, Giovanni Santoruvo

The broad applications of ultrawide-band signals and terahertz waves in quantum measurements, imaging and sensing techniques, advanced biological treatments, and very-high-data-rate communications have drawn extensive attention to ultrafast electronics. In ...

2020

Enabling Optimal Power Generation of Flow Cell Arrays in 3D MPSoCs with On-Chip Switched Capacitor Converters

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, Halima Najibi

Flow cell arrays (FCAs) provide efficient on-chip liquid cooling and electrochemical power generation capabilities in three-dimensional multi-processor systems-on-chip (3DMPSoCs). When connected to power delivery networks (PDNs) of chips, the current flowi ...

2020

Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing

Danick Briand, Alessio Mancinelli

The rapid evolution of the neuromorphic computing stimulates the search for novel brain-inspired electronic devices. Synaptic transistors are three-terminal devices that can mimic the chemical synapses while consuming low power, whereby an insulating diele ...

2020

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Design of an Energy-Efficient Current-to-Frequency Converter for a Wearable Sensor Platform

Maher Kayal, Evgenia Voulgari, François Krummenacher

This paper presents the design of the ANTIGONE ASIC in AMS 0.35 mu m technology that interfaces with ion-sensitive field effect transistors (ISFETs) to detect biomarkers like pH, Na+ and K+ in human sweat. The ISFET sensors generate a low current dc signal ...

IEEE2019

Liquid electromigration in gallium-based biphasic thin films

Stéphanie Lacour, Hadrien Olivier Michaud

Liquid metals have recently gained interest as a material of choice for soft and stretchable electronic circuits, thanks to their virtually infinite mechanical failure strain and high electrical conductivity. Gallium-based thin films are obtained by deposi ...

AMER INST PHYSICS2019