On origin and intrinsic electrical properties of the colossal dielectric constant state in CaCu3Ti4O12
Publications associées (52)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
A sustainable route to store the energy provided by the Sun, is to directly convert sunlight into molecular hydrogen using a semiconductor performing water photolysis. Hematite (α-Fe2O3) is promising for this application due to its ample abundance, chemica ...
Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...
The actualization of a hydrogen economy requires cost-effective and environmentally benign solutions to hydrogen production. Chemical energy in the form of hydrogen is more interesting than electricity to satisfy our ever-increasing energy demand because i ...
The small-molecule organic semiconductor 2,9-di-decyl-dinaphtho-[2,3-b: 2',3'-f]-thieno[3,2-b]-thiophene (C-10-DNTT) was used to fabricate bottom-gate, top-contact thin-film transistors (TFTs) in which the semiconductor layer was prepared either by vacuum ...
Using a pump-probe differential transmission experiment in heterodyne detection, we measured the refractive index dynamics at the ground-state excitonic transition in electrically pumped InAs/GaAs quantum-dot amplifiers emitting near 1.3 mu m at room tempe ...
We propose a model for leakage currents in Schottky contacts on InAlN/GaN heterostructures based on two distinct tunneling mechanisms. Our modeling relies on structural parameters, in particular, InAlN dielectric constant, interface polarization charges an ...
A systematic study was carried out to assess property changes in CaCu3Ti4O12 thin films upon annealing in air in order to evaluate the impact of oxygen vacancies on their colossal dielectric constant behavior. Highly preferentially oriented thin-film sampl ...
The invention relates to electrochemical devices comprising complexes of cobalt comprising at least one ligand with a 5- or six membered, N- containing heteroring. The complex are useful as p- and n- dopants, as over of electrochemical devices, in particul ...
Lead zirconate titanate (Pb(Zr1-xTix)O3 or PZT) ferroelectric ceramics have been widely used in transducers, actuators, and sensors, since they posses high dielectric and piezoelectric properties with a relatively high temperature of operation. Commerciall ...
Crossed-nanotube junctions, the basic constituents of carbon nanotube networks, are investigated by scanning photocurrent microscopy. The location of the predominant electrostatic potential drop, at the electrical contacts or at the junction, is found to b ...