Publication
We propose a model for leakage currents in Schottky contacts on InAlN/GaN heterostructures based on two distinct tunneling mechanisms. Our modeling relies on structural parameters, in particular, InAlN dielectric constant, interface polarization charges and Schottky barrier height, which are experimentally determined in the first part of our work. The first leakage mechanism is dominant in heterostructures with very thin (
Elison de Nazareth Matioli, Zheng Hao, Alessandro Floriduz
Mohammad Samizadeh Nikooytabalvandani