We report, for the first time, self-assembled cantilever and clamped-clamped tri-state carbon nanotube (T-CNT) nano-electro-mechanical (NEM) switches with sub-100 nm air-gap dual lateral gates. Unlike conventional bi-state CNT switches, the T-CNT NEM switches operate in three states: CNT in the center (OFF), CNT attracted to the left gate (ON-1) or to the right gate (ON-2). They demonstrate excellent sensing current windows (I-on/I-off similar to 10(7)), ultra-low I-off (similar to 10(-14)A), good isolation and high endurance (cycle>10(2)). The proposed hysteretic switches offer a complementary metal-oxide-semiconductor (CMOS) - compatible bottom-up approach for various potential applications: logic devices, memories, etc., with higher circuit density and novel ultra-scaled configurability functions.
Tobias Kippenberg, Mikhail Churaev, Xinru Ji, Zihan Li, Alisa Davydova, Junyin Zhang, Yang Chen, Xi Wang, Kai Huang
Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Zhenyu Wang, Ahmet Avsar, Yanfei Zhao, Guilherme Migliato Marega