Publication
An X-band core chip is designed and fabricated in 0.18-um CMOS technology, which can significantly reduce the monolithic microwave integrated circuit count required for realizing an active beam-former T/R module. The core chip consists of two RX/TX paths, each of which includes a 6-b phase shifter, a 6-b attenuator, along with two input and output amplifiers. A new architecture for realizing such a core chip system and a low loss circuit for 5.625 phase shift block are proposed. The overall rms phase and gain errors are better than 2 and 0.25 dB, respectively, in both RX/TX paths. The gain of each path is around 12 dB, while the output 1-dB compression point is higher than 10 dBm over the band of interest.
David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, Mohamed Mostafa Sabry Aly, Halima Najibi
David Atienza Alonso, Giovanni Ansaloni, Alireza Amirshahi