Publication
Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
Publications associées (37)
Nanomechanical Modeling of the Bending Response of Silicon Nanowires
Yusuf Leblebici, Zuhal Tasdemir, Mohammad Nasr Esfahani, Mustafa Yilmaz
Understanding the mechanical behavior of silicon nanowiresis essentialfor the implementation of advanced nanoscale devices. Although bendingtests are predominantly used for this purpose, their findings shouldbe properly interpreted through modeling. Variou ...
AMER CHEMICAL SOC2023Strained crystalline nanomechanical resonators with quality factors above 10 billion
Tobias Kippenberg, Alberto Beccari, Nils Johan Engelsen, Sergey Fedorov
In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...
NATURE PORTFOLIO2022Thermal scanning probe lithography for 2D material-based gas sensing
Recently, two-dimensional (2D) material based gas sensing, especially transition metal dichalcogenide-based sensing, has been widely investigated thanks to its room temperature sensing ability. Unlike metal oxide based sensors, 2D material-based sensing ca ...
2021Static and Fatigue Biaxial Flexural Behavior of Strain-Hardening UHPFRC Thin Slab Elements
Cast-in-place thin layers of Ultra-High Performance Fiber Reinforced Cementitious Composites (UHPFRC) on the specific zones of existing reinforced concrete (RC) bridge decks has been demonstrated to be a technically efficient and economic rehabilitation an ...
EPFL2020An analytical inverse analysis to determine equi-biaxial tensile properties of strain-hardening UHPFRC from ring-on-ring test
Eugen Brühwiler, Emmanuel Denarié, Xiujiang Shen
The equi-biaxial tensile properties of strain-hardening UHPFRC are determined and investigated based on an original analytical inverse analysis of results from ring-on-ring tests. First, the analytical inverse analysis method is developed based on the elas ...
2020Micro-mechanics of 3D architectured metals synthesized by electrodeposition
Maxime Alain Baptiste Mieszala
Cellular metallic materials have emerged as a new promising class of materials due to their lightweight porous structures and advanced multi-functional properties. Originally limited to random metallic foams, modern lithography techniques have enabled the ...
EPFL2018On the mechanical characteristics of a self-setting calcium phosphate cement
John Botsis, Luis Pablo Canal Casado, Dimitrios Karalekas, Alexios Bimis
Objective: To perform a mechanical characterization of a self-setting calcium phosphate cement in function of the immersion time in Ringer solution. Materials and methods: Specimens of self-setting calcium phosphate cement were prepared from pure alpha-TCP ...
Elsevier2017Multimaterial Nanoporous Membranes Shaped through High Aspect-Ratio Sacrificial Silicon Nanostructures
Philippe Renaud, Arnaud Bertsch, Niccolo Piacentini, Stefano Silvio Giovanni Varricchio
We present an innovative fabrication method for solid-state nanoporous membranes based on the casting of sacrificial silicon nanostructures. The process allows the individual definition of geometry and placement of each nanopore through e-beam lithography ...
Amer Chemical Soc2017Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures
Anna Fontcuberta i Morral, Luca Francaviglia
We demonstrate the selective area growth of GaN-(Al,Ga)N core shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. ...
American Chemical Society2016Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices
Maneesha Rupakula, Wolfgang Amadeus Vitale
We build sub-20 nm gaps in hydrogen silsesquioxane (HSQ) by electron beam lithography, to enable nano-template structures for selective epitaxial growth of Ge or III-V semiconductors for ultra-scaled electronic applications [1]. Gaps of this order have bee ...
2016