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Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model

Publications associées (34)

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The scaling of device technologies poses new challenges, not only in circuit design, but also in device modeling, especially because of the short-channel effects and the emergence of novel phenomena like ballistic transport. Nonetheless, it enables the des ...

EPFL2014

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Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semiconductor channel that can push device performance with continuous scaling. In modern electronic circuits, the control of the threshold voltage is essential fo ...

Institute of Electrical and Electronics Engineers2014

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013

FinFET integrated low-power circuits for enhanced sensing applications

Mihai Adrian Ionescu, Antonios Bazigos, Alexandru Rusu, Sara Rigante, Paolo Livi

This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

An ultra-low power energy-efficient microsystem for hydrogen gas sensing applications

Maher Kayal, François Krummenacher, Naser Khosro Pour

This paper presents a fully integrated power management and sensing microsystem that harvests solar energy from a micro-power photovoltaic module for autonomous operation of a miniaturized hydrogen sensor. In order to measure H-2 concentration, conductance ...

Springer US2013

Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model

Christian Enz, Anurag Mangla, Maria-Anna Chalkiadaki

The design of analog circuits strongly relies on the accuracy of the models available in the circuit simulators. The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industr ...

2012

Power and Area Efficient MOSFET-C Filter for Very Low Frequency Applications

Seyed Armin Tajalli, Yusuf Leblebici

New circuit design techniques for implementing very high-valued resistors are presented, significantly improving power and area efficiency of analog front-end signal processing in ultra-low power (ULP) biomedical systems. Ranging in value from few hundreds ...

Springer Verlag2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

RF Compact Modeling of High-voltage MOSFETs

Jean-Michel Sallese, François Krummenacher, Antonios Bazigos, Matthias Bucher

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of ...

Medknow Publications2012

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011