High-performance pure blue phosphorescent OLED using a novel bis-heteroleptic iridium(III) complex with fluorinated bipyridyl ligands
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
We present a study on the improvement of the external Quantum Efficiency (QE) of Gallium-Nitride-based Light Emitting Diodes (LEDs) by the use of the Single Mirror (SMLED) design [N.E.J. Hunt et al., Electron. Lett. 28, 2169 (1992)]. Three different substr ...
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 mum were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL effic ...
We present an experimental study of the exciton and phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells (QW) by means of picosecond time-resolved photoluminescence (PL) measurements. A non-exponential decay is observed both at ...
InGaN/GaN heterostructure samples were grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The growth of InGaN/GaN self-assembled quantum dots was monitored in situ by reflection high energy electron diffraction intensity oscillations. A ...
In this paper, we present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by molecular beam epitaxy. The dot density is significantly reduced from 1 ...
Dissocn. efficiencies for excitation of the repulsive A 1P state of HCl were recorded in Xe, Kr, and Ar matrixes for photon energies between 5 and 10 eV from the content of dissocn. products and quantum efficiencies were derived with the absorption spectra ...
Localization phenomena related to the fluctuating band potential profile of the InGaN alloy were investigated via hydrostatic pressure dependent measurements of luminescence of an InGaN quantum structure. We examine the suitability of the hydrostatic press ...
