Jonction p-n | EPFL Graph Search

vignette|230px|Jonction p-n dans du silicium. Sur ce schéma, les régions p et n sont reliées à des contacts métalliques, ce qui suffit à transformer la jonction en diode. vignette|230px|Le symbole d'une diode associé à la représentation d'une jonction p-n. En physique des semi-conducteurs, une jonction p-n désigne une zone du cristal où le dopage varie brusquement, passant d'un dopage p à un dopage n. Lorsque la région dopée p est mise en contact avec la région n, les électrons et les trous diffusent spontanément de part et d'autre de la jonction, créant ainsi une zone de déplétion, ou zone de charge d'espace (ZCE), où la concentration en porteurs libres est quasiment nulle. Alors qu'un semi-conducteur dopé est un bon conducteur, la jonction ne laisse quasiment pas passer le courant. La largeur de la zone de déplétion varie avec la tension appliquée de part et d'autre de la jonction. Plus cette zone est petite, plus la résistance de la jonction est faible. La caractéristique courant-t

Ab initio study of interface states at metal contacts to III-IV semiconductors

Thomas Maxisch

We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of representative abrupt, defect-free, anion-terminated metal/III-V interfaces. Namely, we focused on Al contacts to GaAs(001), AlAs(001) and cubic GaN(001) as well as on Al, Au and Cu junctions to cubic GaN(001). Recent advances in Schottky barrier concepts emphasize the possible relationship between interface states and the formation of the Schottky barrier. We aim at understanding the atomic-scale mechanisms responsible for interface states as well as their role in the Schottky barrier formation process. At As-terminated Al/GaAs(001) and Al/AlAs(001) junctions, resonant and localized interface states occur at the J point of the interface 2D Brillouin zone near the Fermi energy in the semiconductor midgap region. They correspond to intermetallic bonds between the outermost cation atoms of the semiconductor and the interfacial Al atoms of the metal. These interface states derive from an interaction between localized states of the Al(001) surface and semiconductor conduction band states, mediated by localized states of the unreconstructed, As-terminated semiconductor (001) surface. Our results indicate that interface states of the intermetallic, bonding-like kind could play an important role in the transport properties of metal/AlxGa1-xAs junctions. We have also investigated the electronic structure of Al, Au and Cu junctions to cubic, N-terminated GaN(001). The localized interface state reported for As-terminated Al/GaAs(001) and Al/AlAs(001) junctions occurs also at metal/GaN interfaces under the condition that atoms on the outermost atomic plane of the metal are placed in front of the outermost semiconductor cation. This indicates that the formation mechanism of this state is a very general one. In contrast to Al/AlxGa1-xAs junctions, these states occur at energy much larger than EF for the contacts to GaN. Thus, they are not expected to contribute significantly to the electronic transport of the latter interfaces. However, a large number of interface states attributed to d-type orbitals occur over a wide energy range including EF at contacts of noble metals to GaN.

EPFL2003

Nanoscale Organic / Inorganic Hybrid Photovoltaic Devices

Thomas Dufaux

There is an increasing trend of using various types of nanostructures as components of solar cells. This highlights the need to gain a deeper understanding of the nanoscale interface in such devices. The present thesis aims to study individual photoactive junctions as the elementary functional unit of bulk photovoltaic devices, and exploit the gained knowledge toward further improving the solar cells' efficiency. Along this direction, Schottky-contacts to cadmium sulphide nanowires were thoroughly studied using scanning photocurrent microscopy (SPCM). In conjunction with theoretical simulations of the measured photocurrent profiles, it was found that charge carriers can be very efficiently extracted out of a few micrometer long nanowire segments below the metal contact. Moreover, the carrier combination rate in this section could be determined as a function of an applied bias or backgate voltage. These findings provide valuable clues about how electric fields are distributed within semiconductor nanowire-based devices. Moreover, SPCM was employed to explore the local photoresponse along graphene/CdS heterojunctions, representing a first step toward implementing graphene as an active acceptor material into solar cells. The short circuit current of such devices could be enhanced by two orders of magnitudes through chemical tailoring of the graphene-CdS interface. In addition, evidence was obtained that surface plasmon excitation in the metal contacts can make significant contributions to the generated photocurrent. This effect was exploited in the fabrication of novel surface plasmon detectors, which support different plasmon modes depending on the polarization direction of the incoming light. Finally, it was attempted to realize photovoltaic devices comprising a pn-junction implemented into a π-conjugated organic polymer. While the electric-field assisted exciton dissociation in this system could be successfully modelled in the framework of the Braun-Onsager model, photoinduced charge separation at the interface between differently gated regions of the polymer could not be achieved due to insufficient electron conduction of the material.

EPFL2012

Effect of the pn junction engineering on Si microwire-array solar cells

Anna Dalmau Mallorquí, Franz Michael Epple, Anna Fontcuberta i Morral

We report on the impact of the doping concentration design on the performance of silicon microwire arrays as photovoltaic devices. We have fabricated arrays with different p- and n-doping profiles and thicknesses, obtaining mean efficiencies as high as 9.7% under AM 1.5G solar illumination. The results reveal the importance of scaling the microwire diameter with the depletion width resulting from doping concentrations. The doping of the core should be kept low in order to reduce bulk recombination. Furthermore, the thickness of the n-shell should be kept as thin as possible to limit the emitter losses.

Wiley-VCH Verlag Berlin2012