Packaging technologies for high temperature control electronics

Radisav Cojbasic, Yusuf Leblebici, Thomas Maeder, Peter Ryser, Conor Joseph Slater
IMAPS, 2013
Article de conférence

Résumé

Current low temperature electronics (175°C) for prolonged periods of time require packaging technologies that have to tackle many new problems. At high temperatures traditionally used materials such as organic circuit boards, adhesives and standard solders degrade rapidly or undergo changes in structure and properties. An even more critical issue than high-temperature survivability is resistance to temperature cycling. Thermal mismatch between organic boards and semiconductor dies leads to high thermomechanical strains during swings from high to low temperature extremes, which can make an otherwise high temperature resistant assembly fail after a relatively low number of cycles. This work focuses on the packaging technologies for high temperature control modules, those with logical and signal conditioning applications. Although control modules share many similarities with power modules, they present their own unique design challenges, such as significantly higher complexity and a limitation of compatible materials. Here, recent research on substrates, die attach technologies and wirebond interconnects suited for high temperature ICs are presented along with packaging technologies for discrete components (capacitors and resistors) with the aim of identifying the current best solutions. Test vehicles for the various technologies were constructed and were subjected to high temperature storage at temperatures higher than 200°C. They were analysed in terms of degradation (i.e. loss in shear strength, pull strength, change in resistance, etc.). In parallel, a separate set of samples were subjected to temperature cycles from -20°C to 180°C and then analysed using the same tests as before for comparison. The combined data allow a recommendation to be made on how to assemble a viable control module such as one based on an SOI microcontroller designed at EPFL to operate at high temperatures. Keywords: High temperature packaging, CPUs and MCUs, Reliability

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https://infoscience.epfl.ch/record/188841?ln=fr

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Radisav Cojbasic, Yusuf Leblebici, Thomas Maeder, Peter Ryser, Conor Joseph Slater
IMAPS, 2013
Article de conférence

Résumé

Official source

https://infoscience.epfl.ch/record/188841?ln=fr

À propos de ce résultat

Concepts associés (25)

Concepts associés

Chargement

Publications associées (74)

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The field of micro electromechanical systems (MEMS) evolved from the microelectronic industry and the technologies developed to fabricate integrated circuits. As a result, MEMS are commonly fabricated on silicon wafers. The development of MEMS has been driven by three main merits: miniaturisation, microelectronics integration, and parallel fabrication with high precision. Many operational properties scale well with smaller sizes. In addition, integrated electronic circuitry allows embedding MEMS with computing or networking capabilities, while parallel manufacturing enables the fabrication of many identical devices on a single wafer, reducing the unit cost. The main MEMS application is transducers which transform signals from one form of energy to another, and can be used for perception (sensors) or to produce actions (actuators). Silicon and other microelectronic materials like metals have enabled very high-performance MEMS transducers because these materials can be used for a range of very effective actuating and sensing principles.More recently, polymers have started to be used in MEMS because of their unique electrical, physical and chemical properties which include biocompatibility, viscoelasticity and mechanical shock tolerance. They are also much softer than silicon or metals, and they can be processed using many techniques that allow unique low-cost, batch-style fabrication and packaging. However, polymers have relatively low glass-transition and melting temperatures. As a result, the advantages of polymers cannot easily be combined with high-performance actuating and sensing elements as these are based on silicon technology and require high-temperature fabrication steps. Here, a hybrid-MEMS fabrication process is used to address this issue. The developed devices are based on a trilayer structure, where a thick polymer core is sandwiched between two hard thin films, while electronic layers are embedded within in a fluid-compatible way.The objective of this thesis is to turn hybrid-MEMS into a benchmark MEMS technology. This involves many different aspects. First, sensing and actuation elements are integrated into trilayer devices, and their performance is analysed. Then, some more unique possibilities offered by hybrid-MEMS are exploited. A way to fabricate electronics on multiple layers is developed, which allows different electronic features to be integrated in parallel. In addition, three-dimensional bulk features fabricated at several levels are demonstrated. This is possible because the hybrid-MEMS process is based on the bonding of multiple wafers.All these new fabrication features are demonstrated in atomic force microscopy (AFM) applications. Self-actuated trilayer AFM cantilevers with sharp silicon tips are used to boost imaging speeds in the off-resonance tapping (ORT) mode, thanks to an order of magnitude faster surface probing rates. Furthermore, fully integrated ORT imaging is demonstrated with self-actuated piezoresistive cantilevers. Next, trilayer cantilevers with shielded conductive tips are introduced for electrical AFM modes. Finally, ongoing research projects are touched upon, including approaches to fabricate hybrid-MEMS with single crystal silicon piezoresistors for improved sensitivity, and an analysis of reproducibility of fabricated trilayer cantilevers.

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The present work analyzes the impact of ferroelectric materials like PZT when integrated in a standard 0.5µm CMOS process in order to realize nonvolatile memories. The project has been initiated conjointly by the Swiss Federal Institute of Technology of Lausanne (EPFL) and our industrial partner EM Microelectronic Marin. As part of this study, a specific test and measurement circuit layout has been developed, integrating on a same silicon surface, classical CMOS devices and circuits specifically oriented toward the realization of nonvolatile memories. On the basis of this layout, exhaustive measurements have been carried out. These latter include several classical techniques, well adapted to the follow-up of electrical and physical characteristics, that take place throughout the technological process steps constituting the process in its whole. More specific measurement techniques are presented and results of measurements throughout the technological steps are analyzed. Among them, the Charge Pumping (CP) constitutes, as far as we know, an original method in the field of a study on the effects of ferroelectric materials on a standard CMOS process. Measurement results are presented and analyzed throughout the process steps and provide encouraging results. A major problem has however been raised, namely the anneals in presence of hydrogen. necessary for CMOS electronic devices, however degrading the ferroelectric capacitor characteristics. On the other hand, the initial properties of these devices can he recovered with thermal anneals in presence of oxygen, but in turn these latter are degrading CMOS devices. Solutions quoted from scientific publications are proposed and discussed. A compact model of the hysteretic behavior in ferroelectric materials has been developed in parallel with the project, based on the Preisach theory and on an analytical formulation deduced from a simple and empirical mathematical function. This work. as well as its extension for a ferroelectric transistor model, are presented as they appear in the scientific reviews "Solid State Electronics" and "Transaction on Electronic Devices" respectively.

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Disorder-induced electronic, magnetic, and optoelectronic properties of two-dimensional materials

Cheol Yeon Cheon

Technological advancement has been in cadence with material development by improving the purity of single crystals and, at the same time, controlling their imperfections. These capabilities have been especially vital for developing new technolo-gies based on two-dimensional (2D) van der Waals (vdW) materials for future electronic and optoelectronic applications. This is because the inherent properties of 2D vdW materials is highly susceptible to the presence of intrinsic structural defects and ex-trinsic disorders due to large surface-area-to-volume ratio. The successful reduction of these disorders has significantly im-proved material properties and led to the discovery of novel physical phenomena in vdW materials. On the other hand, structural defects â for instance, 0-dimensional point defects â can induce completely new properties that are otherwise absent in the pre-fect lattice. To harness the full potential of vdW materials, it is thus essential to produce high-quality crystals and understand how the disorder affects their material properties, which is the central idea of this dissertation.In this dissertation, we first present the work of high-quality epitaxial growth of NbS2. Based on atmospheric-pressure chemical vapor deposition, we have successfully synthesized the two polymorphs (2H and 3R) of NbS2 with the largest lateral size grown to date. Their distinct superconducting and metallic properties were examined under low-temperature charge transport, respectively. Our finding demonstrates the practical synthesis method for phase-controllable growth of 2D transition metal dichalcogenides and can benefit future studies in mesoscopic devices and large-area applications of 2D superconductors. Secondly, we present the work of discovering defect-induced novel properties in ultrathin layers of PtSe2. Although bulk PtSe2 is non-magnetic, we observe the appearance of magnetism in monolayer and bilayer PtSe2. We were able to measure the magnetoresistance (MR) of mono- and bilayer PtSe2 under perpendicular magnetic fields using proximitized graphene, and found antiferromagnetic and ferromagnetic MR responses for mono- and bilayer, respectively. The appearance of such different magnetic states is theoretically explained by the first-principle density functional theory calculation, suggesting the origin of induced-magnetic moments from intrinsic Pt vacancies for both layers. Moreover, we also found that structural disorder in PtSe2 can induce bulk photovoltaic effect (BPVE). The second-order optical nonlinear effects, such as BPVE, require broken structural inversion symmetry and crystal symmetry can be reduced by the presence of structural defects. The broken local inversion symmetry from structural disorder in centrosymmetric PtSe2 is manifested by the generation of zero-biased photo-current under homogenous illumination. We observe linear and circular polarization-dependent photocurrents in defective PtSe2, which is largely absent in the pristine crystal. Our findings in PtSe2 emphasize the importance of the structural disorder for generating completely new properties and stress the need for defect-engineering for realizing the practical use of PtSe2 in spintronic and photovoltaic applications.

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Disorder-induced electronic, magnetic, and optoelectronic properties of two-dimensional materials

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