Publication
Hybrid axial and radial Si-GaAs heterostructures in nanowires
Publications associées (41)
Scalable Approaches to III-V Nanowires for Photodetection
III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...
EPFL2023Nanopillars Enabling III-V Integration on Si (100) and (111)
The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...
EPFL2021Doping challenges and pathways to industrial scalability of III–V nanowire arrays
Anna Fontcuberta i Morral, Lucas Güniat, Valerio Piazza, Wonjong Kim
Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...
2021Increasing Functionality of III-V Nanowires on Silicon Substrates
Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...
EPFL2020Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires
Anna Fontcuberta i Morral, Nicolas Tappy, Akshay Balgarkashi
Cathodoluminescence scanning electron microscopy (CL-SEM) data and spectrum as decribed in the main text and supporting information to the publication ...
2019The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy
This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...
EPFL2017Growth of GaAs nanowires on Si (111) for photovoltaic applications
The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...
EPFL2016Time-Resolved Nonlinear Coupling between Orthogonal Flexural Modes of a Pristine GaAs Nanowire
Anna Fontcuberta i Morral, Federico Matteini
We demonstrate nonlinear coupling between two orthogonal flexural modes of single as-grown GaAs nanowires. The resonant frequency of one mode can be shifted over many line widths by mechanically driving the other mode. We present time-domain measurements o ...
American Chemical Society2016Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si
Anna Fontcuberta i Morral, Federico Matteini, Heidi Andrea Potts, Jean-Baptiste Leran, Vladimir Dubrovskii, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...
Institute of Physics2016Parabolic tailored-potential quantum-wires grown in inverted pyramids
Elyahou Kapon, Alok Rudra, Justyna Szeszko, Mikhail Lazarev
Quasi-one-dimensional AlGaAs quantum wires (QWRs) with parabolic heterostructure profiles along their axis were fabricated using metallorganic vapor phase epitaxy (MOVPE) On patterned (111)B GaAs substrates. Tailoring of the confined electronic states via ...
Elsevier Science Bv2015