Publication

Hybrid axial and radial Si-GaAs heterostructures in nanowires

Publications associées (41)

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Connectez-vous pour utiliser Chat avec Graph Search

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

Anna Fontcuberta i Morral, Federico Matteini

We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the n ...

American Institute of Physics2014

, ,

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via th ...

American Institute of Physics2013

Growth and Magnetism of Nanostructures Investigated by STM, MOKE, and XMCD

Alberto Cavallin

This thesis presents our studies on nanostructures growth and magnetism, mainly based on scanning tunneling microscopy (STM), magneto-optical Kerr effect (MOKE), and x-ray magnetic circular dichroism (XMCD) measurements. In most of these experiments, nanos ...

EPFL2013

Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging

Reymond Clavel, Johann Michler

Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and ...

2011

Scanning Tunneling Microscopy and Luminescence of Individual Nanostructures

Theresa Lutz

A detailed investigation and characterization of the local properties of individual nanoscopic structures is of great importance for the understanding of novel physical phenomena at the nanoscale as well as for the assessment of their possible use in futur ...

EPFL2011

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Nicolas Grandjean, Denis Martin, Nils Asmus Kristian Kaufmann

Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree ...

2011

Gold-Free GaAs Nanowire Synthesis and Optical Properties

Anna Fontcuberta i Morral

To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without ...

Institute of Electrical and Electronics Engineers2011

, ,

In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthesized with molecular beam epitaxy are reviewed. Special focus is given on surface passivation mechanisms with radial epitaxial passivation shells. The growt ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2011

GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were ...

Institute of Physics2011