Publication

Impact of He and Cr on defect accumulation in ion-irradiated ultrahigh-purity Fe(Cr) alloys

Publications associées (54)

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Connectez-vous pour utiliser Chat avec Graph Search

Oxygen defects in GaAs: A hybrid functional study

Alfredo Pasquarello, Davide Colleoni

Using hybrid density functional calculations, we address the structural properties, formation energies, and charge transition levels of a variety of oxygen defects in GaAs. The set of considered defects comprises the bridging O atom in a As-O-Ga configurat ...

Amer Physical Soc2016

In the last two decades, the third-dimension has become a focus of attention in electron microscopy to better understand the interactions within subcellular compartments. Initially, transmission electron tomography (TEM tomography) was introduced to image ...

Elsevier2015

, ,

It was recently proposed that the induction period observed during the hydration of tricalcium silicate could be explained by the build-up of ions in solution. Due to the importance of defects in this mechanism, this work describes the effect of different ...

Wiley-Blackwell2014

Using molecular dynamics simulations with recent interatomic potentials developed for Fe, we have studied the defects in thin films of pure bcc Fe induced by the displacement cascade produced by Fe atoms of 50, 100, and 150 keV impinging under a channeling ...

Elsevier Science Bv2014

Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

Oleg Yazyev, Jie Chen, Gabriel Albert Autes, Fernando Gargiulo

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous e ...

Amer Physical Soc2014

In the quest of the structural materials for the future fusion reactor, it has been shown that ferritic/martensitic (F/M) steels are very promising candidates, with a good radiation resistance in terms of damage accumulation in the microstructure relative ...

EPFL2013

The stochastic nature of biological systems makes the study of individual cells a necessity in systems biology. Yet, handling and disruption of single cells and the analysis of the relatively low concentrations of their protein components still challenges ...

Elsevier BV2013

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Nicolas Grandjean, Denis Martin, Nils Asmus Kristian Kaufmann

The effect of thermal annealing on In0.25Ga0.75N/GaN quantum wells grown by molecular beam epitaxy at 550 degrees C is investigated. A strong increase in the 300 K photoluminescence (PL) intensity is observed for samples annealed at 880 degrees C, while de ...

Iop Publishing Ltd2012

Finite-size supercell correction schemes for charged defect calculations

Alfredo Pasquarello, Hannu-Pekka Komsa

Various schemes for correcting the finite-size supercell errors in the case of charged defect calculations are analyzed and their performance for a series of defect systems is compared. We focus on the schemes proposed by Makov and Payne (MP), Freysoldt, N ...

2012

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas, Fabien Devynck

We investigate carbon single-atom and pair defects at the SiC/SiO2 interface as candidate defects for the density of defect states in the SiC band gap. In order to accurately describe the electronic defect levels with respect to the SiC band edges, we use ...

2011