Modeling Asymmetric Operation in Double-Gate Junctionless FETs by Means of Symmetric Devices
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Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...
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In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, seconda ...
We present a complete pixel based on a single-photon avalanche diode (SPAD) fabricated in a backside-illuminated (BSI) 3D IC technology. The chip stack comprises an image sensing tier produced in a 65-nm image sensor technology and a data processing tier i ...