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This work reports on irradiations made on silicon bulk-acoustic wave resonators. The resonators were based on a tuning fork geometry and actuated by a piezoelectric aluminum nitride layer. They had a resonance frequency of 150 kHz and a quality factor of about 20000 under vacuum. The susceptibility of the devices to radiation induced degradation was investigated using 60Co γ-rays and 50 MeV protons with space-relevant doses of up to 170 krad. The performance of the devices after irradiation indicated a high tolerance to both ionizing damage and displacement damage effects. The results support the efforts towards design and fabrication of highly reliable MEMS devices for space applications.
Luis Guillermo Villanueva Torrijo, Silvan Stettler
Tobias Kippenberg, Alberto Beccari, Nils Johan Engelsen
Edoardo Charbon, Pasquale Scarlino, Fabrizio Minganti, Simone Frasca, Marco Scigliuzzo, Vincent Jean Yves Jouanny, Fabian Oppliger, Roberto Musio