Publication

Persistent conductive footprints of 109 degrees domain walls in bismuth ferrite films

Publications associées (34)

Stress effects on the impedance and ferroelectricity of PVDF-BiFeO3-MWCNT films using xanthan gum as dispersant

Composite films based on dispersions of bismuth ferrite (BiFeO3) in polyvinylidene fluoride (PVDF) matrixes were prepared in the presence of multiwalled-carbon-nanotubes (MWCNT), using xanthan gum (XG) as dispersant. Films were prepared by spin coating and ...

ELSEVIER SCIENCE SA2022

Individual Barkhausen pulses of ferroelastic nanodomains

Dragan Damjanovic, Vasiliki Tileli, Reinis Ignatans

Ferroelectric materials, upon electric field biasing, display polarization discontinuities known as Barkhausen jumps, a subclass of a more general phenomenon known as crackling noise. Herein, we follow at the nanoscale the motion of 90 degree needle domain ...

2020

Origins of the macroscopic symmetry breaking in centrosymmetric phases of perovskite oxides

Sina Hashemi Zadeh

Many perovskite materials experience a temperature-driven phase transition at the Curie temperature from a non-centrosymmetric polar ferroelectric phase to a paraelectric phase, where polarization is lost. The paraelectric phase is usually centrosymmetric ...

EPFL2017

Piezoelectric softening by Nb substitution in (Ba,Pb)ZrO

Nava Setter, Nicola Marzari, Dragan Damjanovic, Alberto Biancoli, David Bahati

Donor doping is commonly applied for softening of the piezoelectric and dielectric properties and facilitation of polarization switching in the ubiquitous Pb(Zr,Ti)O-3 [PZT] ceramics. The origin of the donor-dopant effects is not entirely clear. (Pb,Ba)ZrO ...

Wiley-Blackwell2017

Domain walls and defects in ferroelectric materials

Dragan Damjanovic

The results of recent studies of domain walls and their interaction with defects in BaTiO3, Pb(Zr, Ti)O-3, and BiFeO3 are discussed. The studies reveal why donor- and acceptor-doped Pb(Zr, Ti)O-3 behave differently, what is the role of stationary charged d ...

Japan Society of Applied Physics2017

Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

Dragan Damjanovic

Mobile charged defects, accumulated in the domain-wall region to screen polarization charges, have been proposed as the origin of the electrical conductivity at domain walls in ferroelectric materials. Despite theoretical and experimental efforts, this sce ...

Nature Publishing Group2017

Identification of defect distribution at ferroelectric domain walls from evolution of nonlinear dielectric response during the aging process

Tomas Sluka, Pavel Mokry

The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...

Amer Physical Soc2016

Thin-film-specific elastic effects in ferroelectric domain structures

Konstantin Shapovalov

An essential feature of ferroelectric thin films is the presence in them of domain structures. In order to efficiently implement ferroelectric films into potential new ferroelectrics-based devices, it is of high interest to understand the behaviour of doma ...

EPFL2016

Neel-like domain walls in ferroelectric Pb(Zr,Ti)O-3 single crystals

Nava Setter, Tomas Sluka, Xiankui Wei

In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was trea ...

Nature Publishing Group2016

Monocrystalline PZT thin films

Mahamudu Mtebwa

"More with less" has been the motto behind the hardware miniaturization trend in the microelectronics industry since the 1970s. Active research in the growth of oxide films, including ferroelectrics, which started soon after, followed the same trend. Meanw ...

EPFL2015

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