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Deposition of thin films via hydrothermal method has various advantages: low deposition temperature, high purity, deposition on a three-dimensional structure, and a large thickness. Although an epitaxial lead zirconate titanate (PZT) thin-film deposition h ...
Deposition of a hydrothermal method has a number of advantages; low deposition temperature, high-purity, deposition on a three-dimensional structure, and a large thickness. The present paper investigates the improvement of an epitaxial lead zirconate titan ...
Carbon nanofibers (CNF) were synthesized on sintered metal fibers (SMF) filters of nickel and Ni-containing alloys (Inconel, stainless steel (SS)) by thermal chemical vapor deposition of ethane in the presence of hydrogen at not, vert, similar660 °C. The C ...
A short overview is given on deposition and integration of PZT thin films on silicon for MEMS applications. The application principles are explained and the piezoelectric coefficients are compared with the ones of AlN and ZnO. The materials figure of merit ...
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...
ECOLE POLYTECHNIQUE FEDERALE LAUSANNE (ECOL-Non-standard) BENVENUTI G (BENV-Individual) AMOROSI S (AMOR-Individual) HALARY-WAGNER E (HALA-Individual)2002
The paper reviews different aspects of deposition, integration, and device fabrication of PbZrxTi1-xO3 (PZT) films for application in micromechanical systems. The deposition of such films and the principal processes for their integration onto silicon subst ...
There is a need for chemically resistant coatings that protect the exposed surface of microfluidics components. Pinhole free films with low stress and a good uniformity on flat and inclined surfaces are required. In this study, amorphous silicon carbide (S ...
Highly textured PZT(111), PZT(001/100) and random PZT films have been grown on Pt and RuO2 bottom electrodes by means of an in-situ, multimagnetron reactive sputtering process with three metal targets (Pb, Zr, Ti). The orientation was varied with the botto ...
Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 mum technology, tungsten plugs are applied to connect the drain contacts to the first metallization level. In t ...
For micromechanical applications, piezoelectric PbZrTO3 (PZT) thin films have been deposited on metallised Si3N4/SiO2 layers on Si wafers. Films with compositions near the morphotropic phase boundary (x=0.53) were prepared at 600°C using a multitarget, in- ...
