Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors
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EPFL2018
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In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...
