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Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors
Related publications (32)
Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits
Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...
EPFL2021An Analog-Assisted Digital LDO With Single Subthreshold Output pMOS Achieving 1.44-fs FOM
This letter describes an analog-assisted digital LDO that cascades a conventional digital LDO structure with a single, large output pMOS biased in subthreshold to enable fast response to output voltage droop. By digitally controlling the gate voltage of th ...
IEEE2021On-Chip Fully Integrated Field Emission Arrays for High-Voltage MEMS Applications
Vacuum-sealed fully integrated diode and triode field emission arrays based on Ti Spindt-type field emitters have been developed in a scalable, CMOS-compatible process directly on Si. Diode characterization in air demonstrates effective vacuum sealing and ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020GABA-mediated tonic inhibition differentially modulates gain in functional subtypes of cortical interneurons
Sean Lewis Hill, Christian Andreas Rössert, Bas-Jan Zandt, Steven Petrou
The binding of GABA (gamma-aminobutyric acid) to extrasynaptic GABA(A) receptors generates tonic inhibition that acts as a powerful modulator of cortical network activity. Despite GABA being present throughout the extracellular space of the brain, previous ...
NATL ACAD SCIENCES2020A Kinetic Map of the Homomeric Voltage-Gated Potassium Channel (Kv) Family
Henry Markram, Rajnish Ranjan, Emmanuelle Logette, Enrico Scantamburlo, Mirjia Herzog, Valérie Buchillier, Michela Marani, Valérie Tâche
The voltage-gated potassium (Kv) channels, encoded by 40 genes, repolarize all electrically excitable cells, including plant, cardiac, and neuronal cells. Although these genes were fully sequenced decades ago, a comprehensive kinetic characterization of al ...
2019Impact of Fin Width on Tri-Gate GaN MOSHEMTs
Elison de Nazareth Matioli, Jun Ma, Luca Nela, Giovanni Santoruvo, Taifang Wang
In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...
2019Sodium chromium hexacyanoferrate as a potential cathode material for aqueous sodium-ion batteries
Hubert Girault, Emad Oveisi, Pierre Mettraux, Dominika Baster, Surbhi Agrawal
Sodium chromium hexacyanoferrate (NaCrHCF) is obtained here using a facile co-precipitation method at room temperature. The powder was investigated in terms of potential use as a cathode material for aqueous sodium-ion batteries under neutral conditions. T ...
ROYAL SOC CHEMISTRY2019High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators
This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate.
Fi ...
EPFL2018Ultrafast Studies of Hot-Hole Dynamics in Au/p-GaN Heterostructures
Harvesting non-equilibrium hot carriers from photo-excited metal nanoparticles has enabled plasmon-driven photochemical transformations and tunable photodetection with resonant nanoantennas. Despite numerous studies on the ultrafast dynamics of hot electro ...
2018Continuous attractor working memory and provenance of channel models
The brain is a complex biological system composed of a multitude of microscopic processes, which together give rise to computational abilities observed in everyday behavior. Neuronal modeling, consisting of models of single neurons and neuronal networks at ...
EPFL2017