High-temperature Mott transition in wide-band-gap semiconductor quantum wells
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The influence of biexciton formation on the four-wave-mixing response of multiple quantum wells having a strong inhomogeneous broadening of the exciton transitions has been investigated. The experimental results are consistent with a model which distinguis ...
Differences and analogies between disorder-induced localization and electric-field-induced localization are discussed. Calculations using a tight binding model and transfer matrix method for disordered superlattices are reported. Our results indicate the e ...
We study the ultrafast properties of secondary radiation of semiconductor quantum wells under resonant excitation. We show that the exciton density dependence allows one to identify the origin of secondary radiation. At high exciton densities, the emission ...
We have studied the luminescence of narrow quantum wires at photoexcitation densities of up to similar to 3 x 10(6) cm(-1). We show that even at these densities, which are well above the expected Mott density of 8 x 10(5) cm(-1), excitonic recombination do ...
A quantum theory of quantum well polaritons in semiconductor microcavities is developed. The model takes into account the coupling between the exciton level and the structured continuum of electromagnetic modes relative to the particular geometry of the mi ...
We present a study of the electronic properties of In(x)Ga1-xAs/GaAs quantum wells when grown on vicinal substrates, based on photoluminescence (PL) and PL excitation experiments under high magnetic field. The samples measured have a wide range of In conte ...
Polaritons in confined systems are introduced and their dispersion is calculated. The amount of squeezing of confined excitons polaritons in GaAs quantum wells is evaluated. ...
The optical gain spectra of strongly excited multiple GaAs-(Ga,Al)As quantum wells have been determined using the variable stripe length method. The gain spectra are obtained by analysing the dependence of the amplified luminescence intensities on stripe l ...
The optical properties of low pressure metal organic vapor deposition grown GaAs/AlxGa1-xAs (x = 0.5) single quantum well structures (SQW) with grown-in dislocations (GD) were studied by low temperature cathodoluminescence (CL) and photoluminescence (PL). ...
This paper reports on single quantum well characterization by means of luminescence excited with a laser (photoluminescence) and an electron beam (cathodoluminescence) at liquid helium temperatures. Small quantum well regions with smaller confinement were ...