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A 6.7 MHz Nanoelectromechanical Ring Oscillator Using Curved Cantilever Switches Coated with Amorphous Carbon

Publications associées (34)

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Wireless body sensor nodes (WBSNs) are miniaturized devices that are able to acquire, process and transmit bio-signals (such as electrocardiograms, respiration or human-body kinetics). WBSNs face major design challenges due to extremely limited power budge ...

Assoc Computing Machinery2016

A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon

Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Daniel Grogg

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digit ...

IEEE2014

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Daniel Grogg

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring os ...

2014

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Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semiconductor channel that can push device performance with continuous scaling. In modern electronic circuits, the control of the threshold voltage is essential fo ...

Institute of Electrical and Electronics Engineers2014

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Silicon nanowire transistors with Schottky-barrier contacts exhibit both n-type and p-type characteristics under different bias conditions. Polarity controllability of silicon nanowire transistors has been further demonstrated by using an additional polari ...

Institute of Electrical and Electronics Engineers2014

Compact Modeling of Homojunction Tunnel FETs

Mihai Adrian Ionescu, Wladyslaw Grabinski, Antonios Bazigos, Luca De Michielis, Cem Alper, Arnab Biswas, Nilay Dagtekin

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supp ...

IEEE2014

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The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

Amer Chemical Soc2014

A High-Performance Low-Power Near-Vt RRAM-based FPGA

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang

The routing architecture, heavily using programmable switches, dominates the area, delay and power of Field Programmable Gate Arrays (FPGAs). Resistive Random Access Memories (RRAMs) enable high-performance routing architectures through the r ...

2014

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We extend ambipolar silicon nanowire transistors by using three independent gates and show an efficient approach to implement dual-threshold-voltage configurable circuits. Polarity and threshold voltage of uncommitted devices are determined by applying dif ...

2013

Design Methodologies and CAD for Emerging Nanotechnologies

Shashi Kanth Bobba

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013