Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...
The integration of ferroelectrics in electronic devices requires that they be used in the form of thin films, which implies that for such systems finite-size effects related to the presence of a ferroelectric-electrode interface become important. In this t ...
The transverse piezoelectric coefficient d(31)*, has been calculated for the six domain-engineered structures occurring in perovskite single crystals, using data for rhombohedral PMN-33PT [0.67Pb(Mg1/3Nb2/3)O-3-0.33PbTiO(3)], orthorhombic potassium niobate ...
Relaxor-ferroelectric single crystals PZN-xPT [(1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3] and PMN-xPT [(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3] continue to attract much interest due to their anomalously large piezoelectric properties (d33 > 2000 pm/V; k33 > 90%) when poled ("do ...
Piezoelectric micromachined ultrasonic transducers comprising a 10 mu m thick Si device layer and a 14 pro thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was me ...
The influence of the uniaxial bias stress on the piezoelectric properties of tetragonal BaTiO3 and PbTiO3 monodomain crystals is modeled in the framework of the phenomenological Landau-Ginzburg-Devonshire theory. It is shown that tensile and compressive st ...
Near-lattice-matched GaN/AlInN multiple quantum wells (MQWs) are investigated by means of the diamond anvil cell high-pressure technique. The hydrostatic pressure dependence of the photoluminescence dE(PL)/dp and the variation in the PL peak energy with th ...
A phenomenological approach is proposed describing both nonlinearity and frequency dispersion in dielectric and piezoelectric properties of lead zirconate titanate, Pb(Zr,Ti)O-3 (PZT), thin films and ceramics. The approach couples the frequency dependent r ...
We present piezoresponse force microscopy measurements on individual integrated potassium niobate (KNbO3) nanowires. The devices consist of KNbO3 nanowires on SiO2 substrates being mechanically clamped and electrically biased by lithographically defined me ...
A shear mode resonator based on bulk waves trapped in c-axis oriented AlN thin films was fabricated, simulated, and tested. The active 1.55 mu m thick AlN layer was deposited on top of an acoustic Bragg reflector composed of SiO2/AlN lambda/4 layer pairs. ...
