Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode
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Sol-gel process has successfully been applied for the deposition of porous PbZrxTi1-xO3 (x = 0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excell ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
Thin film piezoelectric materials offer a number of advantages in microelectromechanical systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors wit ...
Novel, highly sensitive piezoelectric acoustic sensors based on partially unclamped Pb(Zr-x, Ti1-x)O-3 (PZT) coated cantilever and bridge have been fabricated by silicon micromachining. High sensitivity at low frequencies (5-100 Hz) has been achieved by pa ...
Lead oxide based ferroelectrics, represented by lead zirconate titanate (Pb(Zr,Ti)O-3) or PZT) are the most widely used materials for piezoelectric actuators, sensors and transducers due to their excellent piezoelectric properties. Considering lead toxicit ...
This paper describes fabrication and characterization results of piezoelectric micromachined ultrasonic transducers (pMUTs) based on 2-mu m-thick Pb(Zr0.53Ti0.47O3) (PZT) thin films. The applied structures are circular plates held at four bridges, thus par ...
A review is given on the current state of the art in piezoelectric micromachined ultrasonic transducers (pMUT). It is attempted to quantify the limits of pMUT's with respect to the electromechanical coupling, and to relate current achievements. Main needs ...
We investigated he effect of film orientation on piezoelectric and ferroelectric properties of (Bi(3.25)Ln(0.75))Ti3O12 (Ln=La, Nd, and Sm). c-axis-oriented films were grown on (111)Pt electrodes with nondoped Bi4Ti3O12 buffer layers. The films grown on (1 ...
We present a model for reverse domain nucleation in ferroelectrics, which takes into account ferroelectric-electrode coupling in both homogeneous and random cases. The model provides a solution to the coercivity paradox-i.e., the large discrepancy between ...
Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation and prediction of the properties of ferroelectric devices including nonvolatile memories. The widely accepted approach based on the domain wall motion kine ...
