Well surface roughness and fault density effects on the Hall mobility of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As/InP high electron mobility transistors
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Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...
